shockley diode造句

• This equation implies ( using the Shockley diode law ):
• The reverse " breakdown region " is not modeled by the Shockley diode equation.
• CE ) increase exponentially according to the Shockley diode model and the Ebers-Moll model.
• According to Noyce and Moore, as well as David Brock and Joel Shurkin, the shift from bipolar transistors to Shockley diodes was unexpected.
• William Shockley simplified its design to a two-terminal " four-layer diode " ( Shockley diode ) and attempted its industrial production.
• The Shockley diode equation doesn't describe the " leveling off " of the I V curve at high forward bias due to internal resistance.
• Small signal Shockley diodes are no longer manufactured, but the unidirectional thyristor breakover diode, also known as the dynistor, is a functionally equivalent power device.
• The latter approximation assumes that the bias current I _ Q is large enough so that the factor of 1 in the parentheses of the Shockley diode equation can be ignored.
• The Shockley diode equation has an exponential of V _ D / ( kT / q ), which would lead one to expect that the forward-voltage increases with temperature.
• Shockley hoped that the new device will replace the polarized relay in telephone exchange; however, the reliability of Shockley diodes was unacceptably low, and his company went into decline.
• In the winter of 1954 1955, William Shockley, an inventor of the transistor and a visiting professor at Stanford University, decided to establish his own mass production of advanced transistors and Shockley diodes.
• Shockley initially planned to work on the mass production of diffusion bipolar transistors, but then set up a " secret project " on Shockley diodes, and in 1957 stopped all works on bipolar transistors.
• This was combined with Shockley's vacillating management of the projects; sometimes he felt that getting the basic transistors into immediate production was paramount, and would de-emphasize the Shockley diode project in order to make the " perfect " production system.
• Bo Lojek, based on the archives of Shockley, believes that Shockley Labs never worked on bipolar transistors; that Shockley diodes were Shockley and Beckman's original target, for which Beckman Instruments received military R & D contracts; and that Shockley diodes could have found widespread use in telephony if Shockley had improved their reliability.
• Bo Lojek, based on the archives of Shockley, believes that Shockley Labs never worked on bipolar transistors; that Shockley diodes were Shockley and Beckman's original target, for which Beckman Instruments received military R & D contracts; and that Shockley diodes could have found widespread use in telephony if Shockley had improved their reliability.
• The factor of 2 was included on the assumption that radiation emitted by the cell goes in both directions . ( This is actually debatable if a reflective surface is used on the shady side . ) When the voltage is non-zero, the concentrations of charge carriers ( electrons and holes ) change ( see Shockley diode equation ), and according to the authors the rate of recombination changes by a factor of exp ( " V " / " V c " ), where " V c " is the voltage equivalent of the temperature of the cell, or " thermal voltage ", namely